Intel and Micron Developing 3D XPoint Memory Technology

[CheeseMan42]

Intel and Micron have revealed a joint effort to develop a new memory technology known as 3D XPoint. The new memory could lead to tremendous improvement in computing performance and is being referred to as the "biggest breakthrough in memory technology since NAND was first introduced in 1989." The companies make this claim as the new technology is "up to 1,000 times faster and has up to 1,000 times greater endurance than NAND, and is 10 times denser than conventional memory." The memory uses a transistor-less cross-point architecture that "resembles a 3D checkerboard where memory cells sit at the intersection," allowing for faster memory addressing and the ability to easily scale storage capacity.

Source: Slash Gear

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