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jimmil43

PC4000 memory question

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I purchased 2g of OCZ PC4000 Gold GTX memory and now have it running in my machine with the stock memory settings. My question is if I want to run it at the PC4000 rate, FSB 250 does this mean I'm OCing? Where can I find more info for this? I tried to use some settings from the OCZ forum but I can't seem to unlock the CPU voltage and other voltages. Does this require that I use a different BIOS? I tried to do a search but apparently I'm using the wrong search criteria.

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You will not be O/Cing mem but you will be O/Cing CPU.

 

Make sure you use default mem timingings.

 

When you first boot you should see 3,4,3,8 as timings.

 

You will have to go into BIOS and increase voltage on CPU most likely to run at 250 FSB.

 

VDIMM mem voltage should be around 2.75V

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You will not be O/Cing mem but you will be O/Cing CPU.

 

Make sure you use default mem timingings.

 

When you first boot you should see 3,4,3,8 as timings.

 

You will have to go into BIOS and increase voltage on CPU most likely to run at 250 FSB.

 

VDIMM mem voltage should be around 2.75V

 

 

I've tried to increase the voltage on the CPU core but the BIOS has it blocked out., somehow I need to turn it on

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Blocked out? You looking on the right field i.e. CPU VID?

 

I think new A64 chips can run ram at higher frequencies without uping the fsb.

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These are the settings that the guy at OCZ said to use, it calls for a CPU voltage of 1.4, not the CPU vid, not sure if its right or not.

 

 

FSB Bus Frequency............................. 250 MHz

LDT/FSB Frequency Ratio....................... Auto

CPU/FSB Frequency Ratio....................... 8

PCI eXpress Frequency......................... 100

 

CPU Voltage .................................. 1.400v

LDT Voltage .................................. 1.30v

ChipSet (NF4) Voltage ........................ 1.60V

DRAM Voltage ................................. 2.60v

+0.03 if not 3.2V ............................ enable

 

Memclock (DRAM Frequency) .................... 200

1T/2T Timing (Command Per Clock).............. 1T

CAS Latency (Tcl)............................. 3T

RAS# to CAS# delay (Trcd)..................... 4T

Min RAS# active time (Tras)................... 8T

Row precharge time (Trp)...................... 3T

Row Cycle time (Trc).......................... 11T

Row refresh cyc time (Trfc)................... 16T

Row to Row delay (Trrd)....................... 3T

Write recovery time (Twr)..................... 3T

Write to Read delay (Twtr).................... 2T

Read to Write delay (Trwt).................... 3T

Refresh Period (Tref)......................... 3120

DRAM Bank Interleave.......................... Enabled

 

DQS Skew Control.............................. Auto

DQS Skew Value................................ 0

DRAM Drive Strength........................... Normal 3 or 4 (called Level 6 or 8 in other bios')

DRAM Data Drive Strength...................... Level 2

Max Async Latency............................. 8ns

DRAM Response Time............................ Normal

Read Preamble Time............................ 6ns

IdleCycle Limit............................... 256

Dynamic Counter............................... Disable

R/W Queue Bypass.............................. 16x

Bypass Max.................................... 7x

32 Byte Granularity........................... Disable (4 Bursts)

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maybe try this:

 

Command Per Clock (CPC) - Enable

CAS Latency Control (Tcl) - 3

RAS# to CAS# delay (Trcd) - 4 Bus Clocks

Min RAS# active time (Tras) - 8 Bus Clocks

Row precharge time (Trp) - 3 Bus Clocks

Row Cycle time (Trc) - 7 Bus Clocks

Row refresh cyc time (Trfc) - 14/15 Bus Clocks

Row to Row delay (Trrd) - 4 Bus Clocks

Write recovery time (Twr) - 3 Bus Clocks

Write to Read delay (Twtr) - 2 Bus Clocks

Read to Write delay (Trwt) - 4 Bus Clocks

Refresh Period (Tref) - try 3120 or 4708

( Write CAS Latency (Twcl) - Auto,1 )

DRAM Bank Interleave - Enabled

 

DQS Skew Control - increase

DQS Skew Value - 255

DRAM Drive Strength - 7

DRAM Data Drive Strength - 1

Max Async Latency - 08.0 Nano Seconds

DRAM Response Time - Normal

Read Preamble Time - 06 Nano Seconds

IdleCycle Limit - 16 Cycles

Dynamic Counter - Enable

R/W Queue Bypass - 16 x

Bypass Max - 07 x

32 Byte Granularity - Disable(4 Bursts)

 

2.6 - 2.7v

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